Fig. 1: Photonic curing process with three patterning modes.
a Schematic of three photonic curing processes for forming ZrO2 on PEN: blanket photonic curing (b-PC, top), shadow mask photonic curing (sm-PC, middle), and self-aligned photonic curing (sa-PC, bottom). The rightmost column shows optical images of each PC ZrO2 film on PEN with patterned Al bottom contacts. The borders of the patterned ZrO2 films are marked with orange dashed lines. Scale bars represent 500 µm. b Simulated film (orange) and substrate (grey) temperatures versus time for a 20 ms light pulse on a ZrO2 precursor film deposited on top of Al contacts (PEN/Al/ZrO2-prec, solid lines) and directly on PEN (PEN/ZrO2-prec, dashed lines) using measured data in Supplementary Fig. 1. Inset shows the temperature response of the sample on Al contacts over an extended (5 s) time frame. c Summary of photonic curing outcomes as a function of radiant exposure and pulse length. Conditions resulting in underconverted films (green), sa-PC (yellow), b-PC/sm-PC (blue), and substrate damage (red) are marked with circles for measured conditions and shaded regions are extrapolated.
