Fig. 1: Doping reaction for SWIR absorption and device structure. | npj Flexible Electronics

Fig. 1: Doping reaction for SWIR absorption and device structure.

From: Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping

Fig. 1

a Scheme for the doping reaction between PolyTPD and BCF (see photographs of solutions according to the doping time on the right top) and illustration of the SWIR-OPTR structure with the BCF-doped PolyTPD GSL (right bottom). b Optical absorption spectra of the BCF-doped PolyTPD (PolyTPD:BCF = P:B) films coated on quartz substrates (annealed at 120 °C for 30 min) according to the doping time (inset: corresponding photographs). c Optical density as a function of doping time at various wavelengths (data taken form b). d Photoelectron (PE) yield spectra for the BCF-doped PolyTPD films annealed at 120 °C for 30 min.

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