Fig. 10: Integrated circuit functions formed by ion-gel-gated transistor.
From: Recent advanced applications of ion-gel in ionic-gated transistor
a The circuit diagram of a Single-component inverter. Reproduced with permission121. Copyright 2010, Wiley-VCH. The inset is a scheme of an all-printed ion-gel-gated P3HT transistor with PEDOT: PSS electrodes. b Characteristics of a single-component inverter. c The circuit scheme of the complementary inverter. The upper inset shows the optical image of this complementary inverter. d The dynamic performance of the complementary inverter. e Schematic cross-section of the memory device with colloidal Au NPs with ligands. The chemical structure of the ligand molecule, oleylamine. f Transfer characteristics for an ionic-gel-gated IGZO NvTM containing Au NPs that were applied with different Vprog and Vera. g Summary of the voltage drift in the transfer characteristics of devices prepared from colloidal gold dispersions of different concentrations at ± 9 V program/erase voltages. h Retention characteristics of the programmed and erased signals for an ionic-gel-gated IGZO NvTM. i A series of transfer characteristic curves of ionic-gel gated IGZO NvTM with multiple application/erase operations. Reproduced with permission126. Copyright 2018, American Chemical Society.
