Table 1 Parameters comparison of Ionic-gel Gate Transistor.
From: Recent advanced applications of ion-gel in ionic-gated transistor
μF (cm2 V−1 s−1) | IOn/Off ratio | SS (mV) | Vth (V) | Ionic liquid | Polymer | Channel | Method | Ref |
|---|---|---|---|---|---|---|---|---|
20 | 105 | 158 | −0.13 V | [EMI] [TFSA] | P(VDF-HFP) | In2O3 | Cut and stick | |
20 | 104 | 110 | −0.2 V | [EMIM] [TFSI] | PS-PMMA-PS | PQT-12 | Cut and stick | |
20 | 105 | 270 | −0.5 V | [EMIM] [TFSI] | PS-PEO-PS | PQT-12 | Cut and stick | |
20 | 105 | nr | 0.12 V | Proton | Wheat flour | IZO | Drop | |
2 | 105 | 670 | 0 V | [EMIM][TFSI] | P(VDF-HFP) | IWO | Cut and stick | |
nr | 105 | nr | 12 V | [BMIM][PF6] | PS-PEO-PS | P3HT | Cut and stick | |
20 | 105 | 280 | −0.7 V | [BMIM][PF6] | PS-PMMA-PS | P3HT | Cut and stick | |
2.06 | 105 | nr | −1 V | [EMI] [TFSI] | PS-PMMA-PS | ZnO | Spin-coating | |
nr | 105 | 73 | −0.8 V | [EMIM][TFSI] | P(VDF-HFP) | P3HT | EHD | |
nr | 106 | nr | −1 V | [P14] [TFSI] | SOS-N3 | P3HT | Photo-pattern | |
7.8 | 105 | 135 | 1 V | Proton | Chitosan | ZnO | Spin-coating | |
11 | 105 | 90–110 | 0.65 V | [EMIM][TFSI] | PS−PMMA | SWCNT | Printing | |
1.8 | 102 | nr | 1.2 V | [EMIM][TFSI] | PS-PMMA-PS | WO3 | Cut and stick | |
nr | 105 | nr | 0.5 V | [EMI] [TFSI] | SEAS-N3 | ZnO | Screen-printed | |
nr | 102 | nr | −0.2 V | [EMIM][TFSI] | P(VDF-HFP) | CuSCN | Cut and stick | |
2.3 | 105 | nr | 0 V | [EMI][TFSA] | P(VDF-HFP) | P3HT | Cut and stick |
