Fig. 4: The time response and stability properties of the fabricated β-Ga2O3 phototransistor.
From: High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3
a Time-dependent photoresponse of β-Ga2O3 device under different wavelengths at Vds = 1 V and Vg = −8 V. b Time-dependent photoresponse of β-Ga2O3 device under 250 nm excitation wavelength at Vds = 1 V and Vg = −8 V. c Enlarged view of the rise and decay edges of the curve in b. d The real image of the bending state of the displayed flexible β-Ga2O3 device with a predefined bending angle. e Transfer curves of the device after the device is folded 103 cycles at different angles. f Transfer curves of the device after the device is folded 104 cycles at 0°.
