Fig. 2: The main components of the artificial somatosensory system.
a The schematic diagram and the structure of the CNT/PI based flexible sensor with pyramidal microstructure. b SEM images of the CNT/PI film in the flexible sensor, indicating that the film with multiple different sizes of micro pyramid structures with carbon nanotube networks. c Response of the resistance variation of the flexible tactile sensor under pressures from 0 to 30 N that with different micro pyramid structures (purple curve and blue curves represent the single and multiple different sizes of micro pyramid structure, respectively. The Fitted curves (dotted blue and black lines) show the sensitivity of the device. d The schematic diagram of the In2O3/SA-based artificial synaptic transistor. e Transfer characteristics of the artificial synaptic transistor at Vds of 0.5 V. f The EPSC triggered by presynaptic spikes with different voltage pulses. g Schematic configuration of the IPMC actuator. h The current response of the IPMC actuator at an applied square wave voltage (±2.5 V, 0.1 Hz). i Bending responses of the IPMC actuator at an applied square wave voltage (±2.5 V, 2 Hz).
