Table 2 Summary of performance for solution-processed devices utilizing C6-DMB and tBu-DMB.

From: Solution-processable through-space charge-transfer emitters via solubilizing groups modification

Emitter

Doping ratio

λEL (nm)

EQEa (%)

PEa (lm W-1)

CEa (cd A-1)

CIEb

Vonc (V)

C6-DMB

10%

480

12.6, 12.3, 9.6

17.0, 14.6, 7.9

30.4, 29.7, 23.1

(0.21, 0.34)

3.5

 

30%

492

21.0, 16.2, 8.4

30.7, 19.8, 7.0

47.0, 36.3, 18.8

(0.21, 0.38)

3.7

 

100%

492

14.3, 11.7, 4.8

27.4, 20.0, 5.4

34.9, 28.5, 11.6

(0.22, 0.38)

3.9

tBu-DMB

10%

484

12.2, 11.8, 8.7

16.1, 13.9, 7.0

29.2, 28.5, 20.9

(0.21, 0.35)

3.4

 

30%

492

21.7, 16.5, 8.0

31.4, 21.0, 7.1

49.6, 37.8, 18.4

(0.21, 0.38)

3.8

 

100%

492

8.7, 7.5, 3.0

16.5, 11.2, 3.0

21.0, 18.1, 7.2

(0.22, 0.38)

3.9

  1. aMaximum values of EQE, PE, and CE at the brightness of 100 and 1000 cd m-2, respectively.
  2. bCIE 1931 coordinates.
  3. cTurn-on voltage at 1 cd m-2.