Fig. 5: Flexible device characterization by STEM and TRPL. | npj Flexible Electronics

Fig. 5: Flexible device characterization by STEM and TRPL.

From: Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology

Fig. 5

STEM and EDS graph for the flexible device a cross section STEM image for Flexible device with the corresponding layers of the device identified; b EDS line scan for the complete device. For clarity, only the elements present in the substrate, diffusion barrier and Mo contact are shown. The EDS line scan region is shown in the image; c EDS line scan in the ACIGS layer, where the corresponding elements together with Fe are shown; d room temperature TRPL decay for EBL-SLG, NIL-SLG and Flexible. A double exponential decays is observed for all substrates.

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