Table 2 Description of the samples’ nomenclature, the thickness of the passivation layer, lithography used and the rear stack.

From: Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology

Substrate/Device name

Lithography technique

Dielectric layer thickness (nm)

Rear stack

EBL-SLG

EBL

8

SLG/Mo/SiOx

NIL-SLG

NIL

20

SLG/Mo/SiOx

Flexible

NIL

20

Steel/Mo/SiOx

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