Fig. 4: High-performance fully soft organic transistors.
From: Facile strategy for uniform gold coating on silver nanowires embedded PDMS for soft electronics
a Schematic of the soft semiconducting PTB7-Th/PDMS composite. b AFM images of the PTBT-Th/PDMS composites in the height (left), and phase (right) modes. c Molecular electrostatic potential map and the dipole moment of the PTB7-Th. Sequential optical (d), and AFM height (e) images of the PTB7-Th under the various mechanical strains. Note that d is 190, 220, 250 from the left in (e). f An optical image of the 8 × 8 fully soft organic transistors array. Inset is the magnified optical image of a single device. g The μFE distribution of the high-performance fully soft organic transistors. Data are presented as mean values ± 1 s.d. based on measurements from 64 devices. h The comparison of the μ and maximum stretchability with the reported fully soft organic transistors. Transfer characteristics of the fully soft organic transistors under the strains parallel (i), and perpendicular (j) to the channel length direction. k μFE and VTH changes of the fully soft organic transistors under the strains parallel (top), and perpendicular (bottom) to the channel length direction. Transfer characteristics of the fully soft organic transistors after the repetitive strains parallel (l), and perpendicular (m) to the channel length direction. n μFE and VTH changes of the fully soft organic transistors after the repetitive strains parallel (top), and perpendicular (bottom) to the channel length direction.
