Fig. 3: XRD characterization. | npj Flexible Electronics

Fig. 3: XRD characterization.

From: The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation

Fig. 3

a The thin films annealed in “+” bending state. b The thin films annealed in “−” bending state. SEM characterization. c Unbent, d +10 mm, e +7.5 mm, f −10 mm, g −7.5 mm annealed thin films. h The average grain size of thin films annealed in “+” bending state, i the average grain size of thin films annealed in “−” bending state.

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