Fig. 1: Fabrication scheme and electrical properties of the s-OOSTs. | npj Flexible Electronics

Fig. 1: Fabrication scheme and electrical properties of the s-OOSTs.

From: Stretchable optoelectronic synapses with ultraviolet to near-infrared perception for retina-inspired computing and vision-adaptive sensing

Fig. 1: Fabrication scheme and electrical properties of the s-OOSTs.The alternative text for this image may have been generated using AI.

a Preparation of dextran/TPU/PTDPPSe-6Si. b Preparation of stretchable SWCNT source/drain (S/D) and gate electrodes/stretchable ion gels. c Removing the water-soluble sacrifice layer to get an intelligent sensing/optoelectronic integrated organic stretchable synapse. d Schematic structure of the s-OOSTs and the molecular formulas of the organic semiconductor and ionic gel. e Transfer curves of the s-OOSTs.

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