Fig. 3: Electrical performance and application of the ion-rich OECT. | npj Flexible Electronics

Fig. 3: Electrical performance and application of the ion-rich OECT.

From: Regionally controlled ion-doping of organic electrochemical transistors for computing-memory co-integrated neuromorphic systems

Fig. 3: Electrical performance and application of the ion-rich OECT.

a Transfer and transconductance curves of the ion-rich OECT. b Output curves of the ion-rich OECT. c Stability of the ion-rich OECT over 1000 pulse cycles (VGS = ± 1.5 V, tp = 150 ms, Δt = 150 ms). The current response of the ion-rich OECT under different d pulse voltage amplitude (tp = 10 ms), e pulse widths (VGS = 1.5 V), and f pulse frequencies (VGS = 1.5 V). g Schematic diagrams and testing results of NAND gate. h Schematic diagrams and testing results of NOR gate.

Back to article page