Fig. 1: Characterization of individual OFETs and integrated capacitors.

a, b A schematic diagram and a photograph of p-type and n-type OFETs fabricated on a flexible substrate (Scale bar: 500 μm). c, d Output characteristics of p-type and n-type OFETs under flat (solid blue) and tension-bent (dashed red) conditions. Bending enhances mobility and on-current in p-type devices while reducing both in n-type devices. e Capacitance characterization of eight parasitic circuit-integrated capacitors, measured from 1 Hz to 5 kHz. Inset: variance of capacitance across devices as a function of frequency, showing convergence at higher frequencies and indicating good device-to-device uniformity.