Fig. 6: Comparison of drain current (Ids) versus drain-source voltage (Vds) for two metal oxide thin-film transistor devices: a longer channel (L/W = 367/63 nm, left) and a shorter channel (L/W = 86/62 nm, right).
From: Model representation in amorphous metal oxide thin-film transistors: a critical review
Solid lines denote experimental measurements, while symbols represent simulated model responses. The shorter-channel device exhibits a gradual transition into saturation, accurately captured by the model using a low early voltage (Ve = 2 V). Gate-source voltages (Vgs) were swept from 0.92 to 2.92 V (left) and 0.7–2.7 V (right) in 0.5 V increments89. Left panel: Ids (A) vs Vds (V) for L/W = 367/63 nm; curves from bottom to top: Vgs = 0.92, 1.42, 1.92, 2.42, 2.92 V (0.5 V steps). Right panel: Ids (A) vs Vds (V) for L/W = 86/62 nm; curves from bottom to top: Vgs = 0.7, 1.2, 1.7, 2.2, 2.7 V (0.5 V steps). Solid lines: Measured; open circles: Model.
