Fig. 1: Materials, designs, and operation principles of the flexible Si-based Hall (FSH) sensor.

a (i) Exploded layered structure diagram of the FSH sensor and (ii) Enlarged view of the device area with operational schematic. b Photographs of the various Si-NM shape. Top: Cross. Middle: Rectangle. Bottom: Shuttle. Scale bar: 50 μm. c Comparison of the Hall voltage signal amplitude with the Si-NM shape of the cross, rectangle and shuttle. Error bars represent SD (n = 10). d Optical images of the over view (top) and the geometrical details (bottom) of the FSH sensor. e Photographs of a transferred FSH sensor (i) seamlessly laminated on the fingertip and (ii) nondestructive detachment from the fingertip. f Optical images of the FSH sensor under different modes of mechanical deformation, including bending at the radius of 10 mm and twisting at the angle of 90°, as well as the corresponding FEA results of strain distribution across the Si-NM (the inset) and metal wires. The ns (no significance) p > 0.05, *p < 0.05, **p < 0.01, ***p < 0.001, ****p < 0.0001.