Fig. 2: Schematic of a 2P:1P EDSR qubit architecture, illustrating the way our qubit design can be adapted to atomic scale lithographic techniques using in-plane gates.
From: Optimisation of electron spin qubits in electrically driven multi-donor quantum dots
a The Si matrix (blue box) is shown, with the highlighted green plane containing the physical 2P: 1P qubit along the [100] direction, as emphasised on the right. A schematic of the STM image of the proposed qubit device is presented following ref. 20. ; M middle gate, L left gate, R right gate, S source, D drain, and SET signifying single electron transistor gate. b A qubit geometry with both dots 2P-1P aligned along [100] crystallographic direction. The left, right and middle gates mediate the charge distribution between the dots, hence control single qubit operations.
