Fig. 4: PLE spectrum and charge dynamics of an NV center created by ion implantation in the phosphorus-doped diamond.
a PL intensity as a function of laser detuning (detuned from 636.6 nm) in several individual repetitions without repumping. Unstable resonant excitation is observed only at certain individual repetitions, indicating the NV center in NV0 charge state most of the time. b Time trace of the fluorescence of the NV center under continuous illumination with 290 nW, 594 nm laser, showing NV− charge state with higher counts and NV0 with lower counts. c Histogram of b, showing a larger population of NV0 (left peak) than NV− (right peak). The solid line is a fit. d Laser power dependence of ionization rate. The circles represent experimental data and the solid line is a fit with a saturation-modified quadratic function. Each circle corresponds to an individual measurement. e Laser power dependence of recombination rate. The circles are experimental data and the solid line is a linear fit according to the model. For comparison, the dashed line is a quadratic fit according to the laser power dependence for NV centers in the non-doped diamond. Each experimental data in d and e is obtained by measuring the time trace and fitting the histogram at corresponding laser power. At each laser power various time-trace measurements are performed and similar but different values of the rates are obtained. The error bars on the experimental data are from fitting and indicate the 95% confidence interval.
