Fig. 3: Elemental analysis of the Al/Si material stack by ToF-SIMS.
From: Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits
Depth profiles of a Si, b Al, and c O. Each plot contains data on three samples with varying Al thickness. The sharp increase in the intensity of Si in (a), and the arrows in (c), mark the SM interface of each sample. The inset in (c) shows the O peaks at the SM interface on a linear scale.
