Table 1 Parameters used for participation ratio simulations in Fig. 5

From: Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits

Interface

\(\tan \delta\)

ϵr

Thickness

Thickness

   

Fig. 5b

Fig. 5c

Al

-

-

150 nm

50–500 nm

Air

0

1.0

2 mm

2 mm

Si

10−7

11.7

280 μm

280 μm

MA

10−3

7.0

5 nm

5 nm

SA

10−3

4.0

2 nm

2 nm

SM

10−3

4.0

0.4–2 nm

0.5 nm

corner

10−3

4.0

  
  1. Note: For simplicity, the air environment (cryogenic vacuum) is assumed lossless and the values of \(\tan \delta\) for SM, SA, and MA interfaces are considered equal. \(\tan \delta ={10}^{-3}\) stands at the lower bound of the limits reported by Wang et al.46. The CPW dimensions are w = 20 μm and g = 10 μm.