Table 1 Measured and computed parameters extracted from Si-fin transmons

From: Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications

Qubit#

f01

fRO

α/2π

EJ/EC

g/2π

κ/2π

TPurcell

T1(mean)

\({T}_{2}^{* }(Ramsey)\)

Qubit Q

 

(GHz)

(GHz)

(MHz)

 

(MHz)

(MHz)

(μs)

(μs)

(μs)

 

1a

5.5

5.675

2

4.920

5.731

-270

46

98

1.1

10

11

2.6

350 k

3

4.547

5.758

-200

69

92

0.84

32

15

4.1

430 k

4

4.713

5.803

-274

41

94

0.90

23

20

4.6

580 k

5

4.565

5.849

-279

38

93

1.1

28

26

5.6

750 k

6

4.622

5.893

-273

40

96

1.2

24

22

4.8

650 k

  1. aLikely defective junction.