Fig. 1: The test device is made of a Ge well (red) with thickness Lw ranging from 10 nm to Lw → ∞ (bulk). | npj Quantum Information

Fig. 1: The test device is made of a Ge well (red) with thickness Lw ranging from 10 nm to Lw → ∞ (bulk).

From: Hole spin qubits in unstrained Germanium layers

Fig. 1

It is capped with a 20-nm-thick Ge0.8Si0.2 barrier (blue). The dot is shaped by five Al gates (gray) embedded in 5 nm of Al2O3. The diameter of the central gate is d = 100 nm. The yellow shape illustrates the location and shape of the quantum dot. The orientation of the magnetic field B is characterized by the angles θ and φ in the crystallographic axes set x = [100], y = [010] and z = [001].

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