Fig. 2: g-factors and extensions of the dot as a function of well thickness.

a, b g-factors g∥ and g⊥ as a function of the thickness Lw of strained (S) and unstrained (US) Ge wells. c, d In-plane extension l∥ and out-of-plane extension l⊥ of the dot as a function of Lw. All calculations are performed at VC = −10 mV with the side gates grounded.