Fig. 4: g-factors, LH mixing and extensions of the dot as a function of gate bias in the unstrained, bulk Ge device. | npj Quantum Information

Fig. 4: g-factors, LH mixing and extensions of the dot as a function of gate bias in the unstrained, bulk Ge device.

From: Hole spin qubits in unstrained Germanium layers

Fig. 4

a g-factors g∥ and g⊥, b LH mixing m2, c, d extensions l∥ and l⊥ of the dot as as a function of VC in the unstrained, bulk germanium device.

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