Fig. 6: Spin manipulation metrics in a strained Ge well with thickness Lw = 16 nm. | npj Quantum Information

Fig. 6: Spin manipulation metrics in a strained Ge well with thickness Lw = 16 nm.

From: Hole spin qubits in unstrained Germanium layers

Fig. 6

a–c Normalized LSES (∂fL/∂V)/fL, Rabi frequency fR/Vac at constant Larmor frequency fL = 1 GHz, and quality factor \({Q}_{2}^{* }\) of the C gate as a function of the orientation of the magnetic field. d–f Same for L gate. The bias voltage is VC = −25 mV.

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