Fig. 2
From: Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics
Repaired SLM device with three orders of magnitude higher mobility. a I sd -V sd characteristics of CVD-synthesized monolayer MoSe2 at gate voltages of −20, 0, 20, 40 V. b I sd -V sd characteristics of CVD-synthesized monolayer MoSe2 at zero gate voltage. c I sd -V g curves of CVD-synthesized monolayer MoSe2 before (black) and after (red) the EDTA processing. d I sd -V g curves of another sample before (black) and after (red) processed by EDTA, shows the improved hole mobility of SLM sheet. e The Schottky barrier values of five different samples, black for the unprocessed sample and red for the processed sample, respectively
