Fig. 1
Transport properties of the 3D topological insulators BTS and BSTS as functions of temperature and pressure. a, b Temperature dependence of the electrical resistance obtained at different pressures for BTS and BSTS, displaying the evolution of T*, the temperature that marks the crossover between TSS-dominated and bulk-dominated resistivity. c Pressure dependence of the relative behaviors of the crossover temperature, T*(P)/T*(0.1 GPa), for the two TIs BTS and BSTS, showing a downward trend with increasing pressure. The data labeled by colored circles were obtained from different experimental runs. d The relative transport activation energies (Ea) as a function of pressure for BTS and BSTS, displaying a strong decrease with pressure. The T* and Ea values at the lowest pressures are ~125 K and ~144 meV for BTS and ~180 K and ~165 meV for BSTS respectively. Further information can be found in the SI, Fig. S2
