Fig. 3
Summary of the temperature and pressure-dependent conductances for both BTS and BSTS. a Shows that the high temperature conductance converted from the measured resistance data, dominated by the bulk states, increases by more than an order of magnitude under pressure for both materials, while at low temperatures, (i.e., 10 K), where the surface state conductance dominates, the conductances are relatively independent of pressure. b Illustrates the relative changes in pressure-dependent conductances in specific, plotted as the ratio of the conductance change at pressure to the conductance at 1 GPa (ΔG = G(P)−G(1 GPa)), for both TIs, at both high and low temperatures. c A schematic of the electronic structures for optimally doped BTS and BSTS in the vicinity of the gamma point in the Brillouin Zone under pressure. (Note that this schematic is faithful to the electronic system for BSTS but that the Dirac crossing for BTS is within the notch in the valence band dispersion for that material, not relevant for the considerations here.)
