Fig. 4
From: Real-space observation of charge ordering in epitaxial La2−xSrxCuO4 films
Scanning tunneling microscopy (STM) imaging of the grid phase. a–c Bias-dependent STM topographic images. The scale bar is 1 nm in width and tunneling conditions are set at a V = −2.0 V; b V = −0.4 V; c V = 1.0 V and a fixed current of I = 40 pA. d Local tunneling barrier measurements on the edges (red curve) and hollow regions (black curve) of grid phase, as indicated in a
