Fig. 1
From: Persistence of spin memory in a crystalline, insulating phase-change material
Temperature dependence of the conductance/ resistance of metallic and insulating samples of SnSb2Te4. a Crystal structure of (metastable) rock-salt SnSb2Te4 with Te occupying one sublattice and 25% vacancies, 25% Sn and 50% Sb randomly distributed on the other sublattice. The disorder on the formal cation-sublattice causes charge carrier localization. b Schematic Hall bar device employed for electrical transport experiments; the scale bar is 50 µm. c Sheet resistance vs. temperature for the most insulating S1 and most conducting S9 samples. d Metallic sample S9 shows a conductance (G >> Gc ≈ G0/π2) decreasing as log(T) for decreasing temperature due to quantum corrections. e Insulating sample S1 shows variable range hopping behavior [ln (R) ~ (T/TMott)−1/4] with power-law increase of the resistance below 50 K; TMott ≈ 8500 K for the fitting range marked by the gray background.
