Fig. 1: Electronic transport regimes around the genuine Mott insulator-metal transition at half filling. | npj Quantum Materials

Fig. 1: Electronic transport regimes around the genuine Mott insulator-metal transition at half filling.

From: Low-temperature dielectric anomaly arising from electronic phase separation at the Mott insulator-metal transition

Fig. 1: Electronic transport regimes around the genuine Mott insulator-metal transition at half filling.The alternative text for this image may have been generated using AI.

a Tuning the bandwidth W, for instance by chemical or physical pressure, transforms a Mott insulator to a correlated metal. Dynamical mean-field theory predicts a first-order transition with phase coexistence (delimited by solid lines) up to the critical endpoint6, and a quantum-critical regime associated with the quantum Widom line (QWL, dashed black line) above Tcrit16. The metallic state is confined by the Brinkman-Rice temperature TBR (dashed cyan) at T > Tcrit, the coherent Fermi-liquid regime by TFL (dashed blue). When interactions U are comparable to W, and T ≫ Tcrit, semiconducting behavior prevails; neither a gap nor a quasiparticle peak are stabilized. b–d Resistivity signatures of the crossovers in dc transport. b The steepest slope of \(\mathrm{ln}\,\{\rho (p)\}\) indicates the crossing of the QWL upon a pressure sweep. c TBR indicates the transition from an insulating (dρ/dT < 0) to a metallic (dρ/dT > 0) temperature dependence. d The ρ(T) ∝ T2 behavior extends up to TFL.

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