Fig. 1: Fabrication of graphene/CGT heterostructures and temperature-dependent resistance of pristine CGT and graphene/CGT.
From: Two-dimensional ferromagnetism detected by proximity-coupled quantum Hall effect of graphene
a Conceptual drawing of the heterostructure (left), optical and schematic images of patterned graphene (center) and graphene/CGT (right) for sample D1; (i) and (ii): patterned graphene used to study the electrical properties of pristine CGT and graphene/CGT, respectively. b Transfer characteristic curve (Ids vs. Vbg) of CGT exhibiting p-type behavior. The lower left inset is a side-view schematic of the CGT transistor with a graphene electrode. The upper right inset shows the Ids–Vds curve of CGT measured using the graphene electrode in 2P configuration. c Temperature-dependent resistance of CGT at Vds = 5 V and Vbg = 0 V. The inset shows the Arrhenius plot of the results, where the red fitted line yields an energy gap of ~0.42 eV. d Temperature-dependent Rxx of graphene/CGT at Vbg = 0 V and 0 T. The inset shows a top-view schematic of the measurement configuration.
