Fig. 1: Quantum oscillations in the magnetoresistance of PrAlSi. | npj Quantum Materials

Fig. 1: Quantum oscillations in the magnetoresistance of PrAlSi.

From: Field-induced Lifshitz transition in the magnetic Weyl semimetal candidate PrAlSi

Fig. 1

a The field-dependent of MR measured under a static field at 2 K and a pulsed-field at 1.8 K. The inset is the crystal structure(I41/md) of PrAlSi as the magnetic field easily polarizes the moments of Pr along the c-axis. b Field dependence of the oscillatory part of magnetoresistance Δρ(B) in low magnetic field measured under static field, showing only a single QO frequency. The experiments were carried out with a Leiden dilution refrigerator (14 T) at 80 mK and with a refrigerator of Oxford Instrument (16 T) at T = 10, 17, and 25 K. c Δρ(B) in high magnetic field measured by the pulsed magnetic field, showing more QO frequencies with a complex pattern.

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