Fig. 3: High field limit Hall analysis. | npj Quantum Materials

Fig. 3: High field limit Hall analysis.

From: Pseudogap behavior in charge density wave kagome material ScV6Sn6 revealed by magnetotransport measurements

Fig. 3

a \(\frac{{\rho }_{{{{\rm{xy}}}}}}{{\mu }_{0}H}\) as a function of μ0H to evaluate the high field limit of the two-band model. Note that the curves are not fully saturated at 14 T. b \(\frac{{\rm {d}}{\rho }_{{{{xy}}}}}{{\rm {d}}{\mu }_{0}H}\) as a function of μ0H to approximate the carrier concentration using a one-band model. c nhne extracted from the high field limit of the two-band model and nh from the high field regime of a one-band model. While quantitatively different than the results presented in Fig. 2 for reasons described in the main text, all three of these analyses are qualitatively consistent.

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