Fig. 1: Interlayer excitons in H-type MoSe2/WSe2 heterostructures.
From: Laterally extended states of interlayer excitons in reconstructed MoSe2/WSe2 heterostructures
a Schematic side-view of a MoSe2/WSe2 heterostructure encapsulated in hBN, featuring an interlayer exciton (IX). b Power series of experimental photoluminescence spectra at a bath temperature of \({T}_{{\rm{bath}}}^{\exp }=1.65\,{\rm{K}}\). The IXs emit light at EIX = 1.398 eV with a singular Lorentzian-type shape with a full-width-at-half-maximum (FWHM) γ1. The lineshape is retained down to the lowest investigated excitation powers. c Simulated total potential Vtot landscape within the x–y plane of a strain relaxed, reconstructed bilayer at a twist angle of 1.3° wrt. 60°. The dashed line highlights a certain crystal direction, as discussed in the text. Scale bar marks 10 nm. d Averaged theoretical photoluminescence spectrum with an apparent FWHM of γtheo at a time delay of 10 ns after the excitation and a theoretical bath temperature of \({T}_{{\rm{bath}}}^{{\rm{theo}}}=1.65\,{\rm{K}}\). Note that a zero detuning describes the lowest 1s IX energy without any influence from strain potentials.
