Fig. 1: Translational energy-loss distributions for H atoms scattered from Ge(111)c(2 × 8).
From: Hydrogen atom collisions with a semiconductor efficiently promote electrons to the conduction band
The incident H atoms travel along the [\(\bar 110\)] surface direction, while the polar incidence and scattering angles ϑi and ϑf, respectively, were both 45° with respect to the surface normal. The surface temperature TS was 300 K. a–d, Experimental data (+) and the results of adiabatic molecular dynamics simulations (solid lines) for four H atom translational incidence energies are shown: Ei = 0.37 eV (a), 0.99 eV (b), 1.92 eV (c) and 6.17 eV (d). The bandgap of the surface is 0.49 eV and is indicated by the vertical dashed line. The experimentally obtained ratio of the adiabatic to the VB–CB channel appears in each panel. All experimental curves are normalized to the peak intensity. The MD curves are scaled to fit the adiabatic channel.
