Extended Data Fig. 8: Decoupling of electronic hybridization.
From: Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening
Gate voltage dependent reflection contrast spectrum for angle-aligned WSe2/WS2 heterobilayer without (a) and with (b) a monolayer hBN spacer. The dashed lines in a mark the enhanced contrast at the electron and hole Mott states with moiré filling factor ν = +1 and ν = −1, respectively. The dashed line in b marks the onset of hole doping in the WSe2 layer.
