Extended Data Fig. 8: Temperature dependent electrical resistivities of samples recovered from (a) 25 GPa, 1050 °C, 1 h (Composite-1); (b) 25 GPa, 1100 °C, 1 h (Composite-2); (c) 25 GPa,1150 °C, 1 h (Composite-3); (d) 25 GPa,1200 °C, 1 h. | Nature Materials

Extended Data Fig. 8: Temperature dependent electrical resistivities of samples recovered from (a) 25 GPa, 1050 °C, 1 h (Composite-1); (b) 25 GPa, 1100 °C, 1 h (Composite-2); (c) 25 GPa,1150 °C, 1 h (Composite-3); (d) 25 GPa,1200 °C, 1 h.

From: Ultrastrong conductive in situ composite composed of nanodiamond incoherently embedded in disordered multilayer graphene

Extended Data Fig. 8: Temperature dependent electrical resistivities of samples recovered from (a) 25 GPa, 1050 °C, 1 h (Composite-1); (b) 25 GPa, 1100 °C, 1 h (Composite-2); (c) 25 GPa,1150 °C, 1 h (Composite-3); (d) 25 GPa,1200 °C, 1 h.

The diamond content of these samples is ~20%, 50%, 70% and 90%, respectively. The resistivity of all the samples increases with the decrease of temperature, showing a semiconducting characteristic. The inset in (d) shows the optical image of Knoop indentation of the sample. The applied load is 4.9 N.

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