Extended Data Fig. 6: QAH state in Device B (w = 2 μm).
From: Electrical switching of the edge current chirality in quantum anomalous Hall insulators
a, The optical photograph of Device B. The effective area of the Hall bar device is 8 μm × 2 μm. b, Temperature dependence of ρyx(0) (blue squares) and ρxx(0) (red circles) at Vg = Vg0. All measurements are taken at μ0H = 0 T after magnetic field training. The critical temperature of the QAH state in Device B is ~6.8 K. c, d, μ0H dependence of ρyx and ρxx measured at different temperatures and Vg = Vg0.
