Extended Data Fig. 7: Electrical switching of edge current chirality in Device B through bulk and surface carriers generated SOT.
From: Electrical switching of the edge current chirality in quantum anomalous Hall insulators
a-c, Gate (Vg − Vg0) dependence of ρyx(0) (blue) and ρxx(0) (red) of the QAH insulator with the right-handed CEC (that is the initial state) (a), after the first switch with Ipulse ~ −100 μA (b) and the second switch with Ipulse ~ 100 μA (c) under μ0H|| ~ +0.05 T. Both SOT switches are done at |ρyx(0)| ~ 0.27 h/e2 and T = 20 mK. d, μ0H dependence of ρyx (blue) and ρxx (red) at Vg = Vg0 and T = 20 mK. e, f, μ0H dependence of ρyx at Vg = Vg0 and T = 20 mK after the first (e) and second (f) switches. The red dashed curves correspond to the initial magnetization process after each switch. Vg0s are +1.0 V, +22.5 V, and +35.5 V for the initial state, after 1st switch, and after 2nd switch, respectively.
