Extended Data Fig. 4: Electrical switching of edge current chirality in Device A through bulk and surface carriers generated SOT.
From: Electrical switching of the edge current chirality in quantum anomalous Hall insulators
a, Gate (Vg − Vg0) dependence of ρyx(0) (blue) and ρxx(0) (red) of the QAH insulator after the fourth switch with Ipulse ~ −200 μA under μ0H|| = −0.05 T. The SOT switching is done at ρyx(0) ~ −0.27 h/e2 and T = 20 mK. b, μ0H dependence of ρyx at Vg = Vg0 and T = 20 mK after the fourth switch. The red dashed curve corresponds to the initial magnetization process after the SOT switching. c, Summary of all four switches of CEC chirality at T = 20 mK. The CEC chirality can be switched by changing the direction of either the in-plane magnetic field or the current pulse. Note that the SOT switching is independent of the initial direction of magnetization M (Supplementary Figs. 11 and 12). Therefore, the reversed magnetization should be independent of the number of switching times.
