Extended Data Fig. 7: Electrostatic potential imprinted from a triangular electron lattice.
a, Calculated electrostatic potential profile in a plane that is 1 nm above a triangular electron lattice. To mimic the real moiré lattice, we set the period to 8 nm in the calculation and used the dielectric constant of hBN. The triangular electron lattice imprints a honeycomb potential profile (black line denotes the unit cell and dots denote the sublattice sites). b, Electrostatic potential along the dashed line in a. It shows a trapping potential depth of about 4 meV.
