Extended Data Fig. 9: Results from additional devices.
a,b, First energy derivative of the sensor 2 s spectrum \((\frac{dR}{d{\epsilon }})\) as a function of the gate voltage \(({V}_{t}+{V}_{b})\) for device 3 with a 4-layer hBN spacer (a) and device 4 with a 2-layer hBN spacer (b). The gate voltage \(({V}_{t}+{V}_{b})\) controls the total filling factor under a constant electric field (controlled by \({V}_{t}-{V}_{b}\)). We label the incompressible states \(({\nu }_{m},{\nu }_{t})=(\mathrm{0,1})\) and \((\mathrm{1,1})\) on the left and right panels, respectively.
