Extended Data Fig. 7: Statistical validation of dopant oxygen ion pinning of orbital ordered domains.

(a–c) Three independent differential conductance maps \(g\left({\boldsymbol{r}},-900{\rm{meV}}\right)\) where the locations of the oxygen dopants are identified as black circles. Inset of (a) shows a typical dI/dV spectrum of an oxygen dopant. (d–f) Oxygen-specific order parameter \({N}_{{\varepsilon }}\left({\boldsymbol{r}}\right)\) with overlaying oxygen dopants as black circles. The \({N}_{{\varepsilon }}\left({\boldsymbol{r}}\right)\) are measured simultaneously as \(g\)(r, -900 meV) in (a–c), where the domain walls are highlighted. (g–i) The \({d}_{{\rm{dopant}}}\) histogram (pink bar) is the distance from each dopant to the nearest location on the domain walls. The \({d}_{{\rm{random}}}\) histogram (grey curve) is the expectations of the distance between simulated random points and its nearest point in the domain walls.