Extended Data Fig. 2: Calculation of interface energy of semiconductor-oxide heterostructures. | Nature Materials

Extended Data Fig. 2: Calculation of interface energy of semiconductor-oxide heterostructures.

From: Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration

Extended Data Fig. 2: Calculation of interface energy of semiconductor-oxide heterostructures.The alternative text for this image may have been generated using AI.

a, the schematic illustration of 2D Bi2O2Se/Bi2SeO5 interface. b, The interface formation energy (Einterface) of Bi2O2Se/Bi2SeO5 interface, Si/SiO2 interface52, Si/ald-HfO2 interface53 and MoS2/ald-HfO2 interface54 calculated by DFT, indicating the Bi2O2Se/Bi2SeO5 GAA heterostructure is thermodynamically stable.

Back to article page