Double-sided van der Waals epitaxy across an ultrathin membrane provides a new method for growing a vertical junction with an atomically sharp interface, enabling the direct detection of selection rules for resonant tunnelling between topological surface states.
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Feng, X., Wang, Y. Double-sided van der Waals epitaxy across an atomic layer. Nat. Mater. 24, 334–335 (2025). https://doi.org/10.1038/s41563-025-02131-y
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DOI: https://doi.org/10.1038/s41563-025-02131-y
