Fig. 2: Minimal resistance drift.
From: Amorphous phase-change memory alloy with no resistance drift
a, Resistance drift measurement of as-deposited a-CrTe3 films on heating over 1 h, each at a different holding temperatures. b, Two as-deposited a-CrTe3 films were measured at 25 °C and 150 °C over 10 h (first part, displayed on the left). After aging for 3 days at RT, they were measured at 25 °C and 150 °C over 10 h again (second part, on the right). c, Resistance of the a-CrTe3 film measured at 0 °C and below. d, The a-CrTe3 film was subjected to extreme temperature cycling between –120 °C and 120 °C over 16 times in 24 h, and subsequently, its sheet resistance was measured at –120 °C and 120 °C over time. The distinctive resistance levels were due to the varied thermally excited carrier concentrations at different temperatures. e, Summary of the measured drift coefficient of various a-PCM films. The drift coefficient is highly temperature dependent for other PCMs, for example, ν of a-Sb can be enlarged from ~0.001 at RT to ~0.1 at −173 °C.
