Extended Data Fig. 4: Deterministic multilevel programming.
From: Amorphous phase-change memory alloy with no resistance drift
(a) The scheme of optical programming and electrical measurement on a bridge-like CrTe3 device. (b) The hybrid opto-electro-thermal setup consisted of a nanosecond laser beam with 1 μm spot size (controlled using an arbitrary functional generator, AFG), a source measure unit (SMU) for electrical measurements, and a temperature controller stage (TCS). The bottom-right inset shows the photo of the self-made CrTe3 device. (c) Using a bridge-like device of 10×20 μm2, 16 robust resistance states were obtained at 25, 80 and 150 °C via step-wise SET operations. Each resistance level was measured after sending two laser pulses.
