Fig. 1: Atomic structure and interface-defect-related properties of the 4H-SiC–a-SiO2 interface.
From: Non-invasive bioinert room-temperature quantum sensor from silicon carbide qubits
a, Model of the 4H-SiC–a-SiO2 interface. b, Vertical excitation (V-excitation) energies of C-related defects involving up to four carbon atoms (Cn, where n is the number of C atoms), Si dangling bond (Sid) and Si–Si dimer defects. c, Range of LVM (vertical bars) and ZPL (symbols) values for the most stable defects in b. The symbols mark the ZPL energies and are placed at the midpoint of each LVM range. Vertical bars indicate the corresponding LVM energy ranges (min–max). d, Calculated Kohn–Sham defect levels of Si–Si dimer defects, carbon interstitials (Ci), C-related defects (C=C) with sp2 hybridization and C-cluster defects.
