A phase-change material enables in-memory computing by well-controlled multilevel switching without resistance drift.
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References
Kim, H. J. et al. npg Microgravity 10, 20 (2024).
Wright, C. D., Hosseini, P. & Diosdado, J. A. V. Adv. Funct. Mater. 23, 2248–2254 (2013).
Ielmini, D. & Wong, H.-S. P. Nat. Electron. 1, 333–343 (2018).
Pirovano, A. et al. IEEE Trans. Electron Devices 51, 714–719 (2004).
Wang, X. et al. Nat. Mater. https://doi.org/10.1038/s41563-025-02361-0 (2025).
Raty, J. Y. et al. Nat. Commun. 6, 7467 (2015).
Ketov, S. V. et al. Nature 524, 200–203 (2015).
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Greer, A.L. Exploiting and taming the structural instability for computer memories. Nat. Mater. (2026). https://doi.org/10.1038/s41563-026-02481-1
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DOI: https://doi.org/10.1038/s41563-026-02481-1